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PMZ130UNE 20 v, n-channel trench mosfet 12 march 2015 product data sheet 1. general description n-channel enhancement mode field-effect transistor (fet) in a leadless ultra small dfn1006-3 (sot883) surface-mounted device (smd) plastic package using trench mosfet technology. 2. features and benefits ? very fast switching ? low threshold voltage ? trench mosfet technology ? electrostatic discharge (esd) protection: 2 kv hbm ? leadless ultra small package: 1.0 0.6 0.48 mm 3. applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - 20 v v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 1.8 a static characteristics r dson drain-source on-state resistance v gs = 4.5 v; i d = 1.8 a; t j = 25 c - 120 150 m [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for drain 1 cm 2 . downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 2 / 14 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 s source 3 d drain 3 12 transparent top view dfn1006-3 (sot883) 017aaa255 g d s 6. ordering information table 3. ordering information package type number name description version PMZ130UNE dfn1006-3 dfn1006-3: leadless ultra small plastic package; 3 solder lands sot883 7. marking table 4. marking codes type number marking code PMZ130UNE zu downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 3 / 14 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 20 v v gs gate-source voltage t j = 25 c -8 8 v v gs = 4.5 v; t amb = 25 c [1] - 1.8 a i d drain current v gs = 4.5 v; t amb = 100 c [1] - 1.2 a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 8 a [2] - 350 mw t amb = 25 c [1] - 760 mw p tot total power dissipation t sp = 25 c - 6250 mw t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb = 25 c [1] - 0.7 a [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for drain 1 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standar d footprint. t j (c) - 75 175 125 25 75 - 25 017aaa123 40 80 120 p der (%) 0 fig. 1. normalized total power dissipation as a function of junction temperature t j (c) - 75 175 125 25 75 - 25 017aaa124 40 80 120 i der (%) 0 fig. 2. normalized continuous drain current as a function of junction temperature downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 4 / 14 aaa-016069 v ds (v) 10 -1 10 2 10 1 1 10 -1 10 i d (a) 10 -2 limit r dson = v ds /i d dc; t sp = 25 c dc; t amb = 25 c; drain mounting pad 1 cm 2 t p = 10 s t p = 100 s t p = 1 ms t p = 100 ms t p = 10 ms i dm = single pulse fig. 3. safe operating area; junction to ambient; continuous and peak drain currents as a fu nction of drain- source voltage 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - 315 360 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - 145 165 k/w r th(j-sp) thermal resistance from junction to solder point - 17 20 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for drain 1 cm 2 . downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 5 / 14 aaa-016012 t p (s) 10 -3 10 2 10 3 10 1 10 -2 10 -1 10 2 10 3 z th(j-a) (k/w) 10 duty cycle = 1 0.02 0.01 0 0.05 0.10 0.20 0.33 0.50 0.75 0.25 fr4 pcb, standard footprint fig. 4. transient thermal impedance from junction to ambient as a function of pulse durati on; typical values aaa-016013 t p (s) 10 -3 10 2 10 3 10 1 10 -2 10 -1 10 2 10 3 z th(j-a) (k/w) 10 duty cycle = 1 0.02 0.01 0 0.50 0.75 0.05 0.10 0.20 0.33 0.25 fr4 pcb, mounting pad for drain 1 cm 2 fig. 5. transient thermal impedance from junction to ambient as a function of pulse durati on; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 6 / 14 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = 25 c 20 - - v v gsth gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 0.45 0.7 0.95 v i dss drain leakage current v ds = 20 v; v gs = 0 v; t j = 25 c - - 1 a v gs = 8 v; v ds = 0 v; t j = 25 c - - 5 a v gs = -8 v; v ds = 0 v; t j = 25 c - - -5 a v gs = 4.5 v; v ds = 0 v; t j = 25 c - - 1 a v gs = -4.5 v; v ds = 0 v; t j = 25 c - - -1 a v gs = 2.5 v; v ds = 0 v; t j = 25 c - - 100 na i gss gate leakage current v gs = -2.5 v; v ds = 0 v; t j = 25 c - - -100 na v gs = 4.5 v; i d = 1.8 a; t j = 25 c - 120 150 m v gs = 4.5 v; i d = 1.8 a; t j = 150 c - 178 220 m v gs = 2.5 v; i d = 1.5 a; t j = 25 c - 160 220 m v gs = 1.8 v; i d = 0.25 a; t j = 25 c - 210 310 m r dson drain-source on-state resistance v gs = 1.5 v; i d = 0.01 a; t j = 25 c - 270 530 m g fs forward transconductance v ds = 10 v; i d = 1.6 a; t j = 25 c - 4.1 - s dynamic characteristics q g(tot) total gate charge - 1.6 - nc q gs gate-source charge - 0.15 - nc q gd gate-drain charge v ds = 10 v; i d = 1.6 a; v gs = 4.5 v; t j = 25 c - 0.44 - nc c iss input capacitance - 93 - pf c oss output capacitance - 18 - pf c rss reverse transfer capacitance v ds = 10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 16 - pf t d(on) turn-on delay time - 5.3 - ns t r rise time - 12 - ns t d(off) turn-off delay time - 16 - ns t f fall time v ds = 10 v; i d = 1.6 a; v gs = 4.5 v; r g(ext) = 6 ; t j = 25 c - 5 - ns source-drain diode v sd source-drain voltage i s = 0.7 a; v gs = 0 v; t j = 25 c - 0.8 1.2 v downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 7 / 14 v ds (v) 0 4 3 1 2 aaa-016070 42 6 8 i d (a) 0 v gs = 4.5 v 2.5 v 2 v 1.8 v 1.5 v 1.2 v t j = 25 c fig. 6. output characteristics: drain current as a function of drain-source voltage; typical values aaa-016015 v gs (v) 0 1.5 1 0.5 10 -4 10 -5 10 -3 i d (a) 10 -6 (1) (2) (3) t j = 25 c; v ds = 5 v (1) minimum values (2) typical values (3) maximum values fig. 7. sub-threshold drain current as a function of gate-source voltage i d (a) 0 8 6 2 4 aaa-016071 0.4 0.6 0.2 0.8 1.0 r dson () 0 v gs = 4.5 v 3 v 2.5 v 2 v 1.8 v 1.5 v 1.2 v t j = 25 c fig. 8. drain-source on-state resistance as a function of drain current; typical values v gs (v) 0 5 4 2 3 1 aaa-016072 0.4 0.6 0.2 0.8 1.0 r dson () 0 t j = 150 c t j = 25 c i d = 1.9 a fig. 9. drain-source on-state resistance as a function of gate-source voltage; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 8 / 14 v gs (v) 0 4 3 1 2 aaa-016073 42 6 8 i d (a) 0 t j = 150 c t j = 25 c v ds > i d r dson fig. 10. transfer characteristics: drain current as a function of gate-source voltage; typical values t j (c) -60 180 120 0 60 aaa-016019 1.0 0.5 1.5 2.0 a 0 fig. 11. normalized drain-source on-state resistance as a function of junction temperature; typical values t j (c) -60 180 120 0 60 aaa-016020 0.5 1.0 1.5 v gs(th) (v) 0 (1) (2) (3) i d = 0.25 ma; v ds = v gs (1) maximum values (2) typical values (3) minimum values fig. 12. gate-source threshold voltage as a function of junction temperature v ds (v) 10 -1 10 2 10 1 aaa-016021 10 2 10 10 3 c (pf) 1 (1) (2) (3) f = 1 mhz; v gs = 0 v (1) c iss (2) c oss (3) c rss fig. 13. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 9 / 14 q g (nc) 0 2.0 1.5 0.5 1.0 aaa-016022 2 31 4 5 v gs (v) 0 i d = 1.6 a; v ds = 10 v; t amb = 25 c fig. 14. gate-source voltage as a function of gate charge; typical values 017aaa137 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) fig. 15. mosfet transistor: gate charge waveform definitions v sd (v) 0 2.0 1.6 0.8 1.2 0.4 aaa-016074 21 3 4 i s (a) 0 t j = 150 c t j = 25 c v gs = 0 v fig. 16. source current as a function of source-drain voltage; typical values 11. test information t 1 t 2 p t 006aaa812 duty cycle = t 1 t 2 fig. 17. duty cycle definition downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 10 / 14 12. package outline 03-04-03 dimensions in mm 0.62 0.55 0.55 0.47 0.50 0.46 0.65 0.20 0.12 3 2 1 0.30 0.22 0.30 0.22 1.02 0.95 0.35 fig. 18. package outline dfn1006-3 (sot883) 13. soldering solder lands solder resist occupied area solder paste sot883_fr 1.3 0.3 0.6 0.7 0.4 0.9 0.3 (2) 0.4 (2) 0.25 (2) r0.05 (12) 0.7 dimensions in mm fig. 19. reflow soldering footprint for dfn1006-3 (sot883) downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 11 / 14 14. revision history table 8. revision history data sheet id release date data sheet status change notice supersedes PMZ130UNE v.1 20150312 product data sheet - - downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 12 / 14 15. legal information 15.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at url http://www.nexperia.com . 15.2 definitions preview the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nexperia sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification the information and data provided in a product data sheet shall define the specification of the product as agreed between nexperia and its customer, unless nexperia and customer have explicitly agreed otherwise in writing. in no event however, shall an agreement be valid in which the nexperia product is deemed to offer functions and qualities beyond those described in the product data sheet. 15.3 disclaimers limited warranty and liability information in this document is believed to be accurate and reliable. however, nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. nexperia takes no responsibility for the content in this document if provided by an information source outside of nexperia. in no event shall nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nexperias aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nexperia. right to make changes nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nexperia and its suppliers accept no liability for inclusion and/or use of nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. applications applications that are described herein for any of these products are for illustrative purposes only. nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nexperia products, and nexperia accepts no liability for any assistance with applications or customer product design. it is customers sole responsibility to determine whether the nexperia product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). customer is responsible for doing all necessary testing for the customers applications and products using nexperia products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). nexperia does not accept any liability in this respect. limiting values stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nexperia hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of nexperia products by customer. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 13 / 14 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. non-automotive qualified products unless this data sheet expressly states that this specific nexperia product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nexperia accepts no liability for inclusion and/or use of non- automotive qualified products in automotive equipment or applications. in the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nexperias warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nexperias specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond nexperias standard warranty and nexperias product specifications. translations a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 15.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. downloaded from: http:///
? nexperia b.v. 2017. all rights reserved nexperia PMZ130UNE 20 v, n-channel trench mosfet PMZ130UNE all information provided in this document is subject to legal disclaimers. product data sheet 12 march 2015 14 / 14 16. contents 1 general description ....................................... ........ 1 2 features and benefits ........................................ ....1 3 applications .......................................... ................. 1 4 quick reference data .......................................... ... 1 5 pinning information ................................... ............ 2 6 ordering information ..................................... ........ 2 7 marking .............................................. ..................... 2 8 limiting values ........................................ ...............3 9 thermal characteristics .........................................4 10 characteristics .............................................. ......... 6 11 test information ........................................ ............. 9 12 package outline ......................................... .......... 10 13 soldering .......................................... .................... 10 14 revision history ......................................... .......... 11 15 legal information ....................................... ..........12 15.1 data sheet status .......................................... ..... 12 15.2 definitions .............................................. .............12 15.3 disclaimers ................................................ .........12 15.4 trademarks ............................................... ......... 13 12 march 2015 downloaded from: http:/// ? nexperia b.v. 2017. all rights reserved for more information, please visit: http://www.nexperia.com for sales office addresses, please send an email to: salesaddresses@nexperia.com date of release:

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